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Fujitsu Laboratories LTD. | 論文
- Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO_2-TiO_2 Composite Films
- Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
- The Effect of Repeated Operation on Electrochromism in an All-Solid-State Device Using Li-Doped MgF_2 Thin-Film Electrolyte
- Electrolysis in Electrochromic Devices Consisting of WO_3 and MgF_2 Thin Films
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- 表面記録方式の光ディスク装置における耐ノイズ制御(S62-1 機構・制御(1),S62 情報機器コンピュータメカニクス)
- 201 光磁気ディスク装置1段トラッキング制御系のロバスト制御(情報機器コンピュータメカニクス3 : サーボ, プリンターと紙送り)
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier
- 高付加価値サービスに関するサービス連携基盤技術(ポスターセッション)
- 室温走査型マイクロ・ホール・プローブ顕微鏡による磁区観察
- 室温走査型GaAs/AlGaAsヘテロ構造マイクロ・ホール・プローブ顕微鏡による磁界中の磁区観察
- Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots : Semiconductors
- Lattice Deformation and Ga Diffusion Concerning InAs Self-Assembled Quantum Dots on GaAs(100) as a Function of Growth Interruption Time
- Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40Gbit/s
- A Model of Carrier Capturing and Recombination Process in Quantum-Dot System : Influence of Excitation Power on Spontaneous Emission Intensity and Lifetime
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Lasing Characteristics and Carrier Dynamics of 1.3-μm InGaAs/GaAs Quantum Dot Lasers
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum Dots
- Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures