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Frontier Collaborative Research Center Tokyo Institute Of Technology | 論文
- Fabrication of high-density electron-doped 12CaO・7Al_2O_3 thin films by physical and chemical processes(The 62th CerSJ Awards for Academic Achievement in Ceramic Science and Technology: Review,Aqueous Solution Science for Ceramic Processing II)
- Significant Enhancement of Bi_La_Ti_3O_ Ferroelectricity Derived by Sol-Gel Method
- Dynamic Simulation of the Left Coronary Circulation Using an Electronic Circuit Model for Coronary Vessel
- Study of the Endo-Epi Flow by Using an Electronic Circuit Model of the Coronary Vessel
- 可視/近赤外ハイパースペクトルデータに基づくナラ枯れ指標NWIに関する研究
- ハイパースペクトルセンサにより取得したスペクトルデータによる印刷再現カラー画像の定量的色差評価 (日本画像学会年次大会(通算107回) "Imaging Conference JAPAN 2011"論文集)
- Thermoelectric Properties of P-Type BaSnO_3 Ceramics Doped with Cobalt
- Neural Network Model Switching for Efficient Feature Extraction
- The Determination of the Evoked Potential Generating Mechanism Based on Radial Basis Neural Network Model
- 産業用無人ヘリコプター搭載型ハイパースペクトル観測による稲葉のSPAD値推定技術に関する基礎的研究
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Low-Temperature Synthesis of SrBi_2Ta_2O_9 Thin Films with Bi_2SiO_5-Containing Seed Layers : Surfaces, Interfaces, and Fiims
- Sol-Gel Derived Ferroelectric Pb(Zr_Ti_x)O_3-SiO_2-B_2O_3 Glass-Ceramic Thin Films Formed at Relatively Low Annealing Temperatures
- Fabrication and Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi, La)_4Ti_3O_ Films
- Improvement of Electrical Property of Sol-Gel-Derived Lead Zirconate Titanate Thin Films by Multiple Rapid Thermal Annealing : Surfaces, Interfaces, and Films
- Structural and Electrical Properties of Ferroelectric Pb(Zr1-xTix)O3–SiO2 Glass–Ceramic Thin Films Derived by the Sol–Gel Method
- Characterization of the Sc_2O_3/La_2O_3 High-κ Gate Stack by STM
- Characteristics of LaAlO_3 as Insulating Buffer Layers of Ferroelectric-Gate Field Effect Transistors
- Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation
- Electronic structure study of local dielectric properties of lanthanoid oxide clusters