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Faculty of Engineering, Yamanashi university | 論文
- ソーラーカーの試作
- Electron Temperature in RF Discharge Plasma of CF_4/N_2 Mixture
- Mass Spectrometry of Discharge Products at 13.56 MHz in SF_6 Gas ( Plasma Processing)
- Spatiotemporal Profiles of Optical Emission Spectra in CF_4 Discharges at 1 MHz ( Plasma Processing)
- Low-Frequency Waves in SF_6 Positive Columns Diluted with N_2 Gas
- Attachment-Enhanced Instability in CF_4 Positive Columns
- Forward Waves Excited by Pulsed Electron Beam Injection into Low-Pressure N_2 Gas
- Discharge and Oscillation due to Axial Injection of an Impulsive Electron Beam into SF_6 Gas
- Positive Ions in RF Discharge Plasmas of C_4F_8/Ar and C_4F_8/O_2 Mixtures
- Positive Ions in C_4F_8 RF Discharge in a Planar Diode
- Characteristics of Parallel-Plate RF Discharges in C_4F_8 Gas and C_4F_8/O_2 Mixtures
- Ionic Species in 13.56 MHz Discharges in CF_4 Gas and Mixtures of It with Ar and O_2
- Positive and Negative Ions in RF Plasmas of SF_6/N_2 and SF_6/Ar Mixtures in a Planar Diode
- Positive Ions in RF Discharge Plasma of CF_4 Gas in a Planar Diode
- Negative Ions in 13.56 MHz Discharge of SF_6 Gas in a Planar Diode
- Mass Spectrometrie Observation of Decomposition Products SF_x (x=1,2) in SF_6 Discharge at 13.56 MHz
- Liquid Phase Epitaxy of InGaP on GaAs (100) Substrates at Low Growth Temperatures down to 630℃
- Temperature Variation of Lattice Strain in Slightly Mismatched InGaP/GaAs LPE Layers (0
- Raman Spectral Behavior of In_Ga_xP (0
- Strain-Induced Shift of Optical Phonon Frequency in InGaP Layers Grown on GaAs Substrates