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Elpida Memory, Inc. | 論文
- A Thermally Robust Ti-Rich TiNx Contact Metallization Realizing and Interconnect System Suitable to 0.10-μm DRAMs and Beyond
- A Hierarchical Timing Adjuster Featuring Intermittent Measurement for Use in Low-Power DDR SDRAMs
- Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
- A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
- Long-Retention-Time, High-Speed DRAM Array with 12-F^2 Twin Cell for Sub 1-V Operation(Memory,Low-Power, High-Speed LSIs and Related Technologies)
- Novel Storage-Node Contacts with Stacked Point-Cusp Magnetron Sp-TiN Barrier for Metal-Insulator-Metal Ru/Ta_2O_5/Ru Capacitors in Gigabit Dynamic Random Access Memories
- Analysis of Boron Penetration and Gate Depletion Using Dual-Gate PMOSFETs for High Performance G-Bit DRAM Design(Special Issue on Microelectronic Test Structures)
- An Independent-Source Overdriven Sense Amplifier for Multi-Gigabit DRAM Array