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Electrotechnical Lab. Ibaraki Jpn | 論文
- Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
- Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
- Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
- The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
- Equal-loudness level contours for pure tone under free field listening conditions (I) : Some data and considerations on experimental conditions
- Dielectric Dispersion and Twin Structure in Hexagonal Barium Titanate
- Elastic Properties and the Phase Transitions in Hexagonal Barium Titanate
- Raman-Scattering Study of the Soft Phonon Modes in Hexagonal Barium Titanate
- X-Ray Diffraction Analysis of GaN and GaN/InGaN/GaN Double-Hetero Structures Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition
- Growth and Characterization of Ferroelectric Pb(Zr, Ti)O_3 Films on Interface-Controlled CeO_2(111)/Si(111) Structures
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Strain Effects on Interdiffusion in InAs_P_x/InP Heterostructures
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Annealing of GaN-InGaN Multi Quantum Wells : Correlation between the Bandgap and Yellow Photoluminescence
- Laser-Induced Damage Threshold and Surface Processing of GaN at 400 nm Wavelength
- Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
- Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition : Semiconductors and Semiconductor Devices