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Electrotechnical Lab. Ibaraki Jpn | 論文
- Optical Properties of CuO Studied by Spectroscopic Ellipsometry
- Optical Properties of Cu_2O Studied by Spectroscopic Ellipsometry
- Growth Style of Bi_4Ti_3O_ Thin Films on CeO_2/Ce_Zr_O_2 Buffered Si Substrates
- X-Ray Diffraction Study on Single Crystal of La_Ba_CuO_4
- Synthesis of Superconducting T'-(La_Ce_x)_2CuO_4
- Preparation and Superconducting Properties of La_(Ca_Sr_y)_Cu_2O_
- Crystal Structure of Low Oxygen-Defect Tetragonal Ba_2YCu_3O_
- Crystal Structure and Superconducting Properties of BaPb_Bi_xCu_yO_
- Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
- Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
- Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
- Comparison of Hydride Vapor Phase Epitaxy of GaN Layers on Cubic GaN/(100)GaAs and Hexagonal GaN/(111)GaAs Substrates
- Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
- Flux Density Distribution in YBa_2Cu_3O_x Specimens with Fine Y_2BaCuO_5 Dispersions
- The Origin of Residual Carriers in CVD-Grown 3C-SiC : Semiconductors and Semiconductor Devices
- Direct Observation of Helical Polysilane Nanostructures by Atomic Force Microscopy
- Room-Temperature Epitaxial Growth of CeO_2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
- Microwave Characteristics of TiO_2-Bi_2O_3 Dielectric Resonator
- Influence of Rare Earth Ions on BaO-TiO_2-Rare Earth Oxide Ceramics for Microwave Applications
- Fabrication and Electrical Characteristics of a Trench-Type Metal-Ferroelectric-Metal-Insulator-Semiconductor Field Effect Transistor