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Electrotechnical Lab. Ibaraki Jpn | 論文
- High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length
- Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3
- Preparation of Superconducting Bi-Pb-Sr-Ca-Cu-O Glass Ceramics with T_=106 K
- X-Ray Absorption Near-Edge Studies of La_Sr_xCuO_
- Polarized X-Ray Absorption Fine Structure of La_2CuO_Single Crystal
- X-Ray Absorption Fine Structure Studies of Fe-Doped Ba_2YCu_3O_y
- Superconductivity, Structure and Oxygen Count of Fe-Doped Ba_2YCu_3O_y : Electrical Properties of Condensed Matter
- Pseudomonas aeruginosa as a Model Microorganism for Investigation of Chemotactic Behaviors in Ecosystem
- Transcriptional Analysis of the Multicopy hao Gene Coding for Hydroxylamine Oxidoreductase in Nitrosomonas sp. Strain ENI-11
- 3D12-3 Identification of Chemosensory Proteins for Trichloroethylene in Pseudomonas aeruginosa
- Development of a genetic transformation system for benzene-tolerant rhodococcus opacus strains
- Selective MOCVD Growth of GaAs on Si Substrate with Superlattice Intermediate Layers
- Band Gap Energy and Stress of GaAs Grown on Si by MOCVD
- Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
- MOCVD Growth of GaAs_P_x (x=0-1) and Fabrication of GaAs_P_ LED on Si Substrate
- MOCVD Growth of GaAs_P_ on Si Substrate
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
- Mechnism of MOCVD Growth for GaAs and AlAs
- Solid Composition and Growth Rate of Ga_Al_xAs Grown Epitaxially by MOCVD
- Ellipsometric Studies on Sputter-Damaged Layer in n-InP