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Electrotechnical Lab. Ibaraki Jpn | 論文
- Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
- High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
- AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy
- Use of Multiple Paris of Gain and Saturable Absorber Regions for Semiconductor Optical-Pulse Compressor
- Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
- Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers
- Analysis of Modes in a Vertical Cavity Surface Emitting Laser with Multilayer Bragg Reflectors
- Scanning Tunneling Microscopy and Spectroscopy Observation of Reduced BaTiO_3(100) Surface
- The Damage Energy Transfer to Interfacial Oxide by Phosphorus Ion Implantation for Small Geometry Polysilicon to Polysilicon Contact
- Utilization of Spectral Flatness Measure for the Discrimination of Voiced and Voiceless Stops (音声認識特集)
- Phosphorescence and Thermoluminescence of UV-Irradiated SrO Powders at Temperatures from 120 K to 350 K
- Superconducting Quantum Interference Device Voltage Swing Related to Additional Positive Feedback Parameters
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
- Lower Lamb Wave Resonance Mode of Thin Cylindrical Shells
- Effect of Thin Cylindrical Shell Vibration on Resonant Frequency of Cylindrical Resonator-Type Sound Source
- Amorphization Processes and Structural Relaxation in Ion Implanted Si
- GaAlAs/ GaAs TJS Lasers on Si Substrates Operating at Room Temperature Fabricated by MOCVD
- Pressure-Induced Amorphization of CuGeO_3
- Cu/CaF_2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process