スポンサーリンク
Electronics and Telecommunications Research Institute | 論文
- Ferromagnetism of Heteroepitaxial Zn_Cu_xO Films Grown on n-GaN Substrates
- Lithographic Performance Enhancement Using Dummy Diffraction Mask
- Mission Control System for KOMPSAT-2 Operations(System Engineering-II)
- Design of the COMS Satellite Ground Control System(System Engineering-I)
- KOMPSAT-2 Mission Control Element System(Communication/Navigation/Demonstration (1), Workshop for Space, Aeronautical and Navigational Electronics (WSANE 2005))
- Detailed Design of KOMPSAT-2 Mission Control Element System (2002 Joint Conference on Satellite Communications(JC-SAT2002)--衛星通信技術及び一般)
- Temperature Dependent Breakdown Characteristics in InP/InGaAs Avalanche Photodiodes
- Quantum Interference Effects in an Aharonov-Bohm Ring with a Gate
- Oscillatory Behavior of Nonlocal Electrical Properties in Mesoscopic AlGaAs/GaAs Two-Dimensional Electron Gas Wire Structures
- Anomalous Magnetoresistance near Superconducting Transition Temperature in a Mesoscopic Aluminum Wire
- Aging Treatment Characteristics of Shear Strength in Micro Solder Bump
- Compact Representation of Green Function Using Discrete Wavelet Concept for Fast Field Analysis(Antennas and Propagation)
- An Efficient Time-Domain Electromagnetic Solution Using the Time-Domain Variable Resolution Concept(Antennas and Propagation)
- A High-Speed Si Bipolar Transistor with SAVEN : Self-Aligned device using VErtical Nitride
- The Analysis and Implementation of DVB-S2 BC mode system(Satellite System I)
- A New 1.25-Gb/s Burst Mode Clock and Data Recovery Circuit Using Two Digital Phase Aligners and a Phase Interpolator
- A 1.25-Gb/s Digitally-Controlled Dual-Loop Clock and Data Recovery Circuit with Enhanced Phase Resolution(Electronic Circuits)
- Shared Sub-Path Protection with Overlapped Protection Areas in WDM Networks(Network Management/Operation)
- Establishment of Protection Paths Using Maximum Degree of Sharing in WDM Networks
- Noise Performance of Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Wide Head T-Shaped Gate Recessed by Electron Cyclotron Resonance Plasma Etching