A High-Speed Si Bipolar Transistor with SAVEN : Self-Aligned device using VErtical Nitride

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1992-08-15

著者

• Koo Yong

  Electronics And Telecommunications Research Institute

• Kang S

  Korea Advanced Inst. Sci. And Technol. Taejon Kor

• AN Chul

  Sogang University

• KANG Sang

  Electronics and Telecommunications Research Institute

• An C

  Data Storage Inst. Singapore

• An Chul

  Department of Electronic Engineering, Sogang University

関連論文

• Bipolar-Complementary-Metal-Oxide-Semiconductor (BiCMOS) Technology with Polysilicon Self-Aligned Bipolar Devices
• A High-Speed Si Bipolar Transistor with SAVEN : Self-Aligned device using VErtical Nitride
• A New Low-Resistance Antifuse with Planar Metal/Dielectric/Poly-Si/Dielectric/Metal Structure
• A New Low-Resistance Antifuse with Planar Metal/Dielectric/Poly-Si/Dielectric/Metal Structure
• The Optimization of the Deposition Variables for High Photoconductivity a-Si:H Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
• Capacitance-Voltage Characteristics of SiO_2 Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition as a Function of O_2 Content and Microwave Power

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