The Optimization of the Deposition Variables for High Photoconductivity a-Si:H Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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An C
Data Storage Inst. Singapore
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An Chul
Department Of Electronic Engineering Sogang University
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KANG Moonsang
Department of Electronic Engineering, Sogang University
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KOO Yongseo
Department of Computer Engineering, Seokyeong University
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Koo Yongseo
Department Of Computer Engineering Seokyeong University
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Kang M
Department Of Mechatronics Induk Institute Of Technology
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An Chul
Department of Electronic Engineering, Sogang University
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Kang Moonsang
Department of Mechatronics, Induk Institute of Technology
関連論文
- A High-Speed Si Bipolar Transistor with SAVEN : Self-Aligned device using VErtical Nitride
- A Study on the Relation between Film Quality and Deposition Rate for Amorphous Silicon Films Grown by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using H_2/SiH_4
- The Optimization of the Deposition Variables for High Photoconductivity a-Si:H Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
- Capacitance-Voltage Characteristics of SiO_2 Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition as a Function of O_2 Content and Microwave Power