A Study on the Relation between Film Quality and Deposition Rate for Amorphous Silicon Films Grown by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using H_2/SiH_4

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概要

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• The reletion between film quality and deposition rate of hydrogenated amorphous silicon films deposited by electoron cyclotron resonance plasma chemical vapor deposition using H_2/SiH_4 has been investigated. The properties of amorphous silicon films were improved with increasing deposition rate; photoconductivity increased and optical band gap,full width at half maximum and the ratio od the concentration of dihydride to that of monohydride decreased. The high deposition rate was a very important factor to obtain high quality amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H_2/SiH_4.

• 社団法人応用物理学会の論文
• 1997-08-01

著者

• An Chul

  Department Of Electronic Engineering Sogang University

• KANG Moonsang

  Department of Electronic Engineering, Sogang University

• KIM Jaeyeong

  Department of Electronic Engineering, Sogang University

• LIM Taehoon

  Division of Chemical Engineering, Korea Institute of Science and Technology

• OH Inhwan

  Division of Chemical Engineering, Korea Institute of Science and Technology

• JEON Bupju

  Department of Chemical Engineering, Dankook University

• JUNG Ilhyun

  Department of Chemical Engineering, Dankook University

• Jung Ilhyun

  Department Of Chemical Engineering Dankook University

• Kim Jaeyeong

  Department Of Electronic Engineering Sogang University

• Lim Taehoon

  Division Of Chemical Engineering Korea Institute Of Science And Technology

• Jeon Bupju

  Department Of Chemical Engineering Dankook University

• Kang M

  Department Of Mechatronics Induk Institute Of Technology

• Oh Inhwan

  Division Of Chemical Engineering Korea Institute Of Science And Technology

• Kang Moonsang

  Department of Mechatronics, Induk Institute of Technology

関連論文

• A Study on the Relation between Film Quality and Deposition Rate for Amorphous Silicon Films Grown by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using H_2/SiH_4
• The Optimization of the Deposition Variables for High Photoconductivity a-Si:H Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
• Capacitance-Voltage Characteristics of SiO_2 Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition as a Function of O_2 Content and Microwave Power

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