Capacitance-Voltage Characteristics of SiO_2 Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition as a Function of O_2 Content and Microwave Power

スポンサーリンク

概要

• 論文の詳細を見る

• The capacitance-voltage characteristics of SiO_2 films were investigated as a function of O_2 content and microwave power using the electron cyclotron resonance plasma chemical vapor deposition method. The interface trap density was 10^<10> 〜5×10^<11> eV^<-1>・cm^<-2>. From the capacitance-voltage characteristics, we may assume that positive ions (O_2^+ or O^+) exist in the SiO_2 films and these positive ions increase with increasing O_2 content or microwave power. Low ion energy is important for avoiding positive ions in oxide films so that high-quality oxide can be obtained.

• 社団法人応用物理学会の論文
• 1998-10-15

著者

• An C

  Data Storage Inst. Singapore

• An Chul

  Department Of Electronic Engineering Sogang University

• KANG Moonsang

  Department of Electronic Engineering, Sogang University

• KOO Yongseo

  Department of Computer Engineering, Seokyeong University

• Koo Yongseo

  Department Of Computer Engineering Seokyeong University

• Kang M

  Department Of Mechatronics Induk Institute Of Technology

• An Chul

  Department of Electronic Engineering, Sogang University

• Kang Moonsang

  Department of Mechatronics, Induk Institute of Technology

関連論文

• A High-Speed Si Bipolar Transistor with SAVEN : Self-Aligned device using VErtical Nitride
• A Study on the Relation between Film Quality and Deposition Rate for Amorphous Silicon Films Grown by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using H_2/SiH_4
• The Optimization of the Deposition Variables for High Photoconductivity a-Si:H Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
• Capacitance-Voltage Characteristics of SiO_2 Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition as a Function of O_2 Content and Microwave Power

スポンサーリンク