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Electronics Research Laboratories, Nippon Steel Corporation | 論文
- Photo- and Electroluminescence from Electroehemically Polished Silicon
- Blue Light Emission from Rapid-Thermal-Oxidized Porous Silicon
- Large Induced Absorption Change in Porous Silicon and Its Application to Optical Logic Gates
- Hydrogen Termination and Optical Properties of Porous Silicon : Photochemical Etching Effect
- Dislocation Density Reduction in SIMOX (Separation by Implanted Oxygen) Multi-Energy Single Implantation
- Thermal Resistance and Electrornic Characteristics for High Electron Mobility Transistors Grown on Si and GaAs Substrates by Metal-Organic Chemical Vapor Deposition
- Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes
- Wedge-Shaped Silicon Emitter Fabricated by New Method
- Defects in Czochralski-Grown Silicon Crystals Investigated by Positron Annihilation
- Quasi-Phase-Matched Second-Harmonic Generation in a Periodic-Lens Sequence Waveguide with a Relatively Wide Wavelength-Tuned Width
- Application of Copper-Decoration Method to Characterize As-Grown Czochralski-Silicon
- High Frequency Resonant Electromagnetic Generation and Detection of Ultrasonic Waves
- Laser Picosecond Acoustics in Various Types of Thin Film : Ultrasonic Measurement
- Laser Picosecond Acoustics in Thin Films : Effect of Elastic Boundary Conditions on Pulse Generation
- Oxygen Clusters in Quenched Czochralski-Si Studied by Infrared Spectroscopy and Positron Annihilation
- Fabrication and Emission Characteristics of Polycrystalline Silicon Field Emitters
- Photoluminescence from Silicon Quantum Crystallites : Core and Surface States
- Picosecond Luminescence Decay in Porous Silicon
- Single-Frequency Laser Using a 100-μm Thick Nd:YVO_4 Crystal in a 50-mm Long Cavity
- New Fabrication Method and Electrical Characteristics of Conical Silicon Field Emitters