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Electronics And Telecommunications Res. Inst. (etri) Daejeon Kor | 論文
- A Low-Power Half-Swing Clocking Scheme for Flip-Flop with Complementary Gate and Source Drive
- Single-Chip Implementation of a 32-bit Motor-Drive-Specific Microcontroller with Floating-Point Unit (Special Issue on Integrated Electronics and New System Paradigms)
- Operational Validation of the COMS Satellite Ground Control System During the First Three Months of In-Orbit Test Operations
- A Computationally Efficient Search Space for QRM-MLD Signal Detection
- QR-LRL Signal Detection for Spatially Multiplexed MIMO Systems
- Preamble Boosted Power Based Frame Timing Acquisition Algorithm for Cellular OFDMA Systems(Wireless Communication Technologies)
- APPLICATIONS OF CHEMICAL-MECHANICAL-POLISHING PROCESS TO SILICON FIELD EMITTER ARRAY
- POLYCRYSTALLINE SILICON FIELD EMITTER ARRAYS WITH A GATED STRUCTURE
- Fabrication and Characterization of Silicon Field Emission Cathodes using Spin-on-Glass Etch-back Process
- Fabrication and Characterization of Silicon Field Emission Cathodes using Spin-on-Glass Etch-back Process
- Security Analysis of a Variant of Self-Shrinking Generator
- A New CMOS Linear Transconductor
- Mission Control System for KOMPSAT-2 Operations(System Engineering-II)
- Design of the COMS Satellite Ground Control System(System Engineering-I)
- Design of the COMS Satellite Ground Control System
- KOMPSAT-2 Mission Control Element System(Communication/Navigation/Demonstration (1), Workshop for Space, Aeronautical and Navigational Electronics (WSANE 2005))
- Detailed Design of KOMPSAT-2 Mission Control Element System (2002 Joint Conference on Satellite Communications(JC-SAT2002)--衛星通信技術及び一般)
- 16-Mb Synchronous DRAM with 125-Mbyte/s Data Rate (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Variable V_<CC> Design Techniques for Battery-Operated DRAM's (Special Section on the 1992 VLSI Circuits Symposium)
- Interfacial Reaction between Aluminum Metal and Boron-Doped Polysilicon in a Planar Type Antifuse Device