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Division Of Precision Science And Technology And Applied Physics Graduate School Of Engineering Osak | 論文
- High-Spatial-Resolution Machining Utilizing Atmospheric Pressure Plasma : Machining Characteristics of Silicon
- Polishing Characteristics of Silicon Carbide by Plasma Chemical Vaporization Machining
- Ultraprecision Machining Utilizing Numerically Controlled Scanning of Localized Atmospheric Pressure Plasma
- Hydrogen Interaction with Single-Walled Carbon Nanotubes
- Hard X-ray Diffraction-Limited Nanofocusing with Kirkpatrick-Baez Mirrors
- Two-dimensional Submicron Focusing of Hard X-rays by Two Elliptical Mirrors Fabricated by Plasma Chemical Vaporization Machining and Elastic Emission Machining
- Ionized Cluster Beam Deposition of Polycrystalline Thin Films of CuInSe_2
- High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
- High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization : Semiconductors
- First-Principles Evaluations of Machinability Dependency on Powder Material in Elastic Emission Machining
- Plasma Chemical Vaporization Machining (CVM) for Fabrication of Optics
- Spin-Coating Technology of the Cover Layer for Digital Video Recording-Blue Disc(Surfaces, Interfaces, and Films)
- The Phase Change Optical Disc with the Data Recording Rate of 140 Mbps
- Phase-Change Optical Disc with the Data Recording Rate of 100Mbps
- Phase Change Disc for High Data Rate Recording
- Measurement Accuracy in Phase-Shifting Point Diffraction Interferometer with Two Optical Fibers
- A Study of GaAs Digital ICs on Si Substrates
- Effect of Bias Sputtering on W and W-Al Schottky Contact Formation and its Application to GaAs MESFETs : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation
- The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method