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Division Of Precision Science And Technology And Applied Physics Graduate School Of Engineering Osak | 論文
- A New Insulated-Gate Inverted-Structure Modulation-Doped AlGaAs/GaAs/N-AlGaAs Field-Effect Transistor
- Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation
- Growth of Crystalline Silicon on a Cryogenic Substrate by Photochemical Reaction in a Condensed Phase
- Surface replication with one-nanometer-level smoothness by a nickel electroforming process
- THREE-DIMENSIONAL ENDOSCOPIC ULTRASONOGRAPHY IMAGING IN THE DIGESTIVE TRACT
- Ultraprecision Machining Utilizing Numerically Controlled Scanning of Localized Atmospheric Pressure Plasma
- High-Spatial-Resolution Machining Utilizing Atmospheric Pressure Plasma: Machining Characteristics of Silicon