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Division Of Materials Science And Engineering Seoul National University | 論文
- Preparation and Critical Current Density of Melt-Textured Y-Ba-Cu-O Superconductor Containing Fine Y_2BaCuO_5 Inclusions
- A Comparison of the Kinetics and the Evolution of Microstructure of the Solid Phase Crystallized a-(Si_Ge_/Si) and a-(Si/Si_Ge_) Bilayer Films; Interface versus Surface Nucleated Films
- Reducing the Thermal Budget of Solid Phase Crystallization of Amorphous Si Film Using Si_Ge_ Seed Layer
- Perpendicular Magnetic Anisotropy and Layered Structure in Co/Pd Multilayered Thin Films
- Effect of Interface State on the Magnetic Properties in Co/Pd and Co/Pt Multilayered Thin Films
- Device Characteristics of Polycrystalline Si_Ge_ Thin Film Transistors Grown from Si_2H_6 and GeH_4 Source Gases
- Effects of tilt-cut Si substrates on crystal structure and magnetic anisotropy of metallic ferromagnetic thin films
- NiFeCo/Cu/Co System for Magnetoresistive Random Access Memory (MRAM)
- NiFeCo/Cu/Co System for Magnetoresistive Random Access Memory (MRAM)
- Characterization of magnetoresistance in ferromagnetic/oxide/ferromagnetic structured thin films
- Characterization of magnetoresistance in ferromagnetic/oxide/ferromagnetic structured thin films
- Effects of Substrate Surface Topology on NiFe/Cu/Co Spin Valve Characteristics
- Structure and magnetic properties of Ni-Zn ferrite thin films prepared by RF magnetron sputtering at room temperature
- Structure and magnetic properties of Ni-Zn ferrite thin films prepared by RF magnetron sputtering at room temperature
- Finite Element Analysis of Hot Rolled Coil Cooling
- FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION
- FABRICATION OF POLY-SI TFT ON THE GLASS SUBSTRATE BY METAL-INDUCED LATERAL CRYSTALLIZATION
- Magnetoresistance of ferromagnetic tunnel junctions with Al2O3 formed by plasma-assisted atomic layer controlled deposition (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム)
- A study on the oxidation kinetics of ultrathin cobalt films (マルチメディアストレージ--第5回アジア情報記録技術シンポジウム〔英文〕)
- Magnetoresistance of ferromagnetic tunnel junctions with Al_2O_3 formed by Plasma-Assisted Atomic Layer Controlled Deposition