スポンサーリンク
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan | 論文
- Impact of Barrier Metal Sputtering on Low-k SiOCH Films with Various Chemical Structures
- A Small Area, 3-Dimensional On-chip Inductors for High-speed Signal Processing under Low Power Supply Voltages
- Porous Low-$k$ Impacts on Performance of Advanced LSI Devices with GHz Operations
- Effects of Si/Ni Composition Ratio of NixSiy Gate Electrode and Hf/Si Composition Ratio of Hf-Based High-$k$ Insulator on Threshold Voltage Controllability and Mobility of Metal–Oxide–Semiconductor Field-Effect Transistors
- Magnetic Properties and Writing Characteristics of Magnetic Clad Lines in Magnetoresistive Random Access Memory Devices
- Extrasmall-Area Three-Dimensional Solenoid-Shaped Inductor Integrated into High-Speed Signal Processing Complementary Metal–Oxide–Semiconductor Ultralarge-Scale Integrated Circuits
- Two-Step Inverse Modeling for Estimation of Channel Impurity Pile-up
- Impact of Barrier Metal Sputtering on Physical and Chemical Damages in Low-$k$ SiOCH Films with Various Hydrocarbon Content
- Physical Model for Reset State of Ta2O5/TiO2-Stacked Resistance Random Access Memory