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Department of Quantum Engineering, Nagoya University | 論文
- Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage (Short Note)
- Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy : Semiconductors
- A Verification Method for Formal Requirements Description
- AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si_3N_4 Gate Insulator
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Fluidic Assembly of Thin GaAs Blocks on Si Substrates
- Comparison of Electrical Characteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs
- Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
- Fabrication of vertically-aligned CNT electrodes using plasma-enhanced CVD for chemical sensors
- Effect of Pt Substitution by Cu on Structural and Morphological Changes in Fe-Pt Nanoparticles during Annealing as Studied by In-situ Transmission Electron Microscopy
- Development of a gas injection/specimen heating holder for use with transmission electron microscope
- Focused ion beam preparation techniques dedicated for the fabrication of TEM lamellae of fibre-reinforced composites
- In Situ Study of Chemical Reaction between Silicon and Graphite at 1,400℃ in a High Resolution/Analytical Electron Microscope
- Improved Performance of Discharge-Pumped XeCl Laser Using Ar/He Diluent
- High Performance of Silicon Oxide Selective Etching Using F_2 Gas and Graphite Instead of Perfluorinated Compound Gases
- Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma
- Behaviors of carbon atom density in hydrocarbon and fluorocarbon plasmas
- Measurement of Einstein's A Coefficient of the 296.7 nm Transition Line of the Carbon Atom
- Measurement of Carbon Atom Density in High Density Plasma Process
- Influence of Impurity-Scattering on Tunneling Conductance in d-Wave Superconductors with Broken Time Reversal Symmetry (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)