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Department of Quantum Engineering, Nagoya University | 論文
- Rapid-Swept CW Cavity Ring-down Laser Spectroscopy for Carbon Isotope Analysis
- A clock line for a large scale reconfigurable data paths processor (超伝導エレクトロニクス)
- Mechanically Tunable High-Temperature Superconducting Microwave Filter With Large Shift of Resonant Frequency : Superconductors
- Preparation of Superconducting Magnetostatic Wave (MSW) Devices Consisting of High-T_c Superconductor (HTS)/Perovskite-Type Manganite Heterostructures: Application of Pr_Ca_MnO_3 as a MSW Waveguide : Superconductors
- Formation of c-Axis Oriented YBa_2Cu_3O_ Thin Film on Amorphous Substrates with Al(111) Buffer Layer
- Systematic Measurement of Critical Current Density for Narrow YBa_2Cu_3O_y Lines
- Numerical Analysis of Influence of Surface Barrier on Current-Voltage Characteristics for Narrow Superconducting Lines
- Growth of Carbon Nanotubes by Microwave-excited Non-Equilibrium Atmospheric-Pressure Plasma
- Diamond Film Formation by OH Radical Injection from Remote Microwave H_2/H_2O Plasma into Parallel-Plate RF Methanol Plasma
- High-Rate Anisotropic Ablation and Deposition of Polytetrafluoroethylene Using Synchrotron Radiation Process
- Synthesis of Diamond Using RF Magnetron Methanol Plasma Chemical Vapor Deposition Assisted by Hydrogen Radical Injection
- Study on the Absolute Density and Translational Temperature of Si Atoms in Very High Frequency Capacitively Coupled SiH_4 Plasma with Ar, N_2, and H_2 Dilution Gases
- A Novel Silicon-Dioxide Etching Process Employing Pulse-Modulated Electron-Beam-Excited Plasma
- Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH_4 Plasmas
- Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF_4 Plasmas
- TEM Observation of Micrometer-Sized Ni Powder Particles Thinned by FIB Cutting Technique
- Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C_5F_O/N_2 Plasma
- Combinatorial Plasma Etching Process
- H_2 Partial Pressure Dependences of CH_3 Radical Density and Effects of H_2 Dilution on Carbon Thin-Film Formation in RF Discharge CH_4 Plasma
- Correlation between CH_3 Radical Density and Carbon Thin-Film Formation in RF Discharge CH_4 Plasma