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Department of Physical Electronics, Tokyo institute of Technology | 論文
- Effect of Mn Doping on the Dielectric Properties of Ba_2Ti_9O_ Ceramics at Microwave Frequency
- Mossbauer Study of FeMo_2S_4
- Mossbauer Study on Pb(FeTa)_O_3
- Temperature Characteristics of a GaAs-AlGaAs Integerated Twin Guide Laser with Distributed Bragg Reflectors
- GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 μm Wavelength
- Photoinduced Displacement Current in Polyimide Langmuir-Biodgett Films Deposited on Au Electrodes
- Photoinduced Current across Polyimide Langmuir-Blodgett Films in the Absence of an External Electric Field
- Measurement of Surface Energy States in Polyimide Larngmuir-Blodgett Tunneling Barrier
- On the Energy and Momentum Conservation Laws for Linearized Electromagnetic Fields in a Dispersive Medium
- Frequency Dependence of Displacement Current and Channel Current in Pentacene Thin-Film Transistors
- Probing of Maxwell-Wagner Type Interfacial Charging Process in Double-Layer Devices by Time-Resolved Second Harmonic Generation
- Decay process of a large surface potential of as-deposited Alq3 films
- Thermal Dilatation in Pb(Zn_1/3Nb_2/3)O_3 Crystal
- Characterization of Hydrogen in Epitaxial Si Films Grown at Very Low Temperature
- Detection of Electron Transfer in Multilayer Systems by a Displacement Current-Measuring Technique
- Selective Detection of As(V) with High Sensitivity by As-deposited Boron-doped Diamond Electrodes
- All-Optical Switching for Future Fiber-Optic Communication System ((放送方式、放送現業、無線・光伝送)2000 Asia-Pacific Symposium on Broadcasting and Communications)
- Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO_2 Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition
- Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si
- InP/InGaAs Composite Metal-Oxide-Semiconductor Field-Effect Transistors with Regrown Source and Al_2O_3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3mA/μm