Effect of Mn Doping on the Dielectric Properties of Ba_2Ti_9O_<20> Ceramics at Microwave Frequency
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概要
- 論文の詳細を見る
The effect of Mn doping on the dielectric properties of Ba_2Ti_9O_<20> ceramics has been investigated at microwave frequency. The dielectric constant and the temperature coefficient are not sensitive to the addition of Mn, while the unloaded Q depends strongly upon it as well as on heat treatment at high temperature. A minute addition of Mn leads to an increase in the Q value. A high value of Q of more than 5200 was obtained at 9 GHz with the addition of 0.5〜1.0 mol% Mn.
- 社団法人応用物理学会の論文
- 1983-07-20
著者
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NOMURA Shoichiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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KANETA Kumiko
Department of Physical Electronics, Tokyo Institute of Technology
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Kaneta Kumiko
Department Of Physical Electronics Tokyo Institute Of Technology
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Kaneta Kumiko
Department Of Physical Electronics Tokyo Institute Of Technology Ookayama
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TOMAYA Keiichiro
Department of Physical Electronics, Tokyo Institute of Technology Ookayama
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Nomura Shoichiro
Department Of Physical Electronics Tokyo Institute Of Technology Ookayama
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Nomura Shoichiro
Department Of Physical Electromics Tokyo Instiute Of Technology
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Nomura Shoichiro
Department Of Physical Electornics Faculty Of Engineering Tokyo Institute Of Technology
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Tomaya Keiichiro
Department Of Physical Electronics Tokyo Institute Of Technology Ookayama
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