スポンサーリンク
Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Evaluation of a Multi-Line De-Embedding Technique up to 110GHz for Millimeter-Wave CMOS Circuit Design
- Analysis of CMOS Transconductance Amplifiers for Sampling Mixers
- Developmemt of High-Efficiency CuIn_xGa_Se_2 Thin-Film Solar Cells by Selenization with Elemental Se Vapor in Vacuum
- Photoisomerization of Azobenzene Dendrimer Monolayer Investigated by Maxwell Displacement Current Technique : Atoms, Molecules, and Chemical Physics
- Second-Harmonic Generation in C_ Film
- Observation of the Electric-Dipole-Forbidden States in Polydiacetylene by Means of Resonance Second-Harmonic Generation Spectroscopy
- Heteroepitaxy of Layered Compound InSe and InSe/GaSe onto GaAs Substrates
- InGaP/GaAs Heterojunction Bipolar Transistors with an Ultra-High Carbon-Doped Base (p=1.5×10^cm^)
- Low Temperature Growth of Heavily Carbon-Doped GaAs by Metalorganic Molecular Beam Epitaxy with Elemental Gallium
- Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE
- Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Preparation of GaAs and Ga_Al_xAs Multi-Layer Structures by Metalorganic Molecular Beam Epitaxy
- Metalorganic Molecular-Beam Epitaxial Growthand Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
- Determination of Dielectric Relaxation Time of Langmuir-Films by a Whole-Curve Method Using the Maxwell Displacement Current