スポンサーリンク
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C. | 論文
- Tunable Light Emission from GaN-Based Photonic Crystal with Ultraviolet AlN/AlGaN Distributed Bragg Reflector
- Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films
- Volumetric Scattering Layer for Flexible Transflective Display
- Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth
- Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
- Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
- The Linear Combination Model for the Degradation of Amorphous Silicon Thin Film Transistors under Drain AC Stress
- Photoluminescence from InN Nanorod Arrays with a Critical Size