The Linear Combination Model for the Degradation of Amorphous Silicon Thin Film Transistors under Drain AC Stress

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概要

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• The degradation behavior of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) under steady-state (DC) and pulsed (AC) stress on drain electrode has been investigated in this paper. Signals with various peak levels, frequencies and duty ratios are applied onto the drain electrode to see their effects on device's reliability. The effects of state creation and removal are found to still be the dominant degradation mechanisms of drain stress. With the experiment data, it is significantly proved that the degradation behavior can be predicted by analyzing the gate-to-source and gate-to-drain vertical electric field during stress. Furthermore, a linear combination model has been contributed in this paper. By using this model, one can estimate the threshold voltage shift under drain AC stress of different voltage levels, frequencies, duty ratios for a given stress time. With satisfactory agreement between the real and estimated data, this model has been proved to be very useful in predicting and evaluating a-Si:H TFT reliability with both gate and drain signal applied.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-08-25

著者

• Tsai Ming-Hsien

  Industrial Technology R and D Master Program of Image Display Technologies, College of Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Tai Ya

  Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

• Huang Shih-Che

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan 30010, R.O.C.

関連論文

• The Linear Combination Model for the Degradation of Amorphous Silicon Thin Film Transistors under Drain AC Stress

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