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Department of Engineering Physics, Faculty of Engineering, Kyoto University | 論文
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si (100) Formed by Chemical Treatment
- Transient Oxide Layer at a Thermally Grown SiO_2/Si Interface, Interpreted Based on Local Vibration and X-Ray Reflectivity
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
- Boundary Structure of Mo/Si Multilayers for Soft X-Ray Mirrors
- Electron-Irradiation-Induced Amorphization in Mo/Si Nano-Multilayer Material
- Proposal of Cryogenic Plasmas in Liquid Helium II
- Mechanism of the Reduction of Electron Shading Charge Build-up Using Pulsed Plasma
- High-Frequency Measurements of Plasma Parameters in Electron Cyclotron Resonance Plasma Etchers(Nuclear Science, Plasmas, and Electric Discharges)
- Evaluation of Charge Passed through Gate-Oxide Films Using a Charging Damage Measurement Electrode
- Production of highly uniform electron cyclotron resonance plasmas by distribution control of the microwave electric field
- Slant Slot Antenna-Type Electron Cyclotron Resonance Plasma Source
- Concentric Spread Plasma Source
- Metastable Defect Cluster Formation during Radiation-Induced Amorphization in NiTi
- Atomistic observation and simulation analysis of spatiotemporal fluctuations during radiation-induced amorphization
- Effect of Surface Modification by Ion Implantation on Hydrogenation Property of TiFe Alloy
- Dynamical Study of Spatio-Temporal Structural Fluctuations in the Intermetallic Compound Nickel-Titanium during Radiation-Induced Crystalline-to-Amorphous Transformation
- Improvement of Corrosion Resistance and Structural Change in 304 Stainless Steel by means of Ion-Mixing
- Formation and Stability of Metallic Silicides during Ion-Beam-Mixing in the Systems of Mo/Si and Ti/Si
- Spatial Distribution and Transport of an Electron Cyclotron Resonance Plasma Generated Using Dominant-Mode Microwave
- Spatial Distribution Measurement of Microwave Electric Field Using Thermal Sensitive Paper in a Microwave Etching System