スポンサーリンク
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan | 論文
- Transmission Electron Microscopic Study of Whisker Formation on Tetracalcium Phosphate in Hydrochloric Acid
- Stability of La2O3 Metal–Insulator–Metal Capacitors under Constant Voltage Stress
- Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory (Special Issue : Solid State Devices and Materials (2))
- A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage
- Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor
- Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots
- Performance Enhancement by Local Strain in $\langle 110\rangle$ Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate
- Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization
- Resistive Switching Properties of SrZrO3-Based Memory Films
- Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
- A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires
- Unipolar Resistive Switching in ZrO
- Unipolar Resistive Switching in ZrO₂ Thin Films