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Department of Electronics, Fukuoka University | 論文
- Effective Diffusion Coefficient and Controlling Process of P Diffusion in Si Based on the Pair Diffusion Models of Vacancy and Interstitial Mechanisms
- Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon
- Changes of DLTS Spectrum with Gold Concentration and Gold-Diffusion Temperature in N-Type Silicon
- Annealing of Supersaturated Low-Temperature Substitutional Gold in Silicon
- A Simple Method to Determine λ from Isothermal Capacitance Measurements
- Three States of Substitutional Gold in Silicon
- Effect of Annealing Method upon Annealing Characteristics of Supersaturated Substitutional Gold in Silicon
- Schematic Model for the Migration of Interstitialcy-Type Self-Interstitial Including the Middle State
- Field-Emission Activation on Boron-Doped Chemical-Vapor-Deposited Polycrystalline Diamond Films
- Environmentally Benign Formation of Poly(methacrylate ester) Microspheres by Precipitation Copolymerization in Supercritical Carbon Dioxide
- Energy Level and Solid Solubility of Cobalt in Silicon by In-Depth Profile Measurement
- Reverse Recovery Time of Junction Diodes with High Capture Rate of Minority Carriers in the Low Injection Level
- Edge Effect on the Determination of Capture Rate of Minority Carriers from Transient Capacitance Measurement
- Differential Method for Measuring Thermally Stimulated Capacitance
- Simple ICTS Measurement Method
- Note on the Analysis of DLTS and C^2-DLTS