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Department of Electronics, Faculty of Engineering, Tokai University | 論文
- Junction Properties of Polycrystalline Diamond / Hydrogenated Amorphous Silicon p-n Heterojunctions
- Polycrystalline Diamond/Hydrogenated Amorphous Silicon P-N Heterojunction
- Fabrication of Solid-State Triode Devices by Use of Diamond Thin Films
- Backward-Diode Characteristics of p-Type Diamond / n-Type Silicon Heterojunction Device
- Formation Mechanism of Surface Conductive Layer on Diamond Films : Comparison between Polycrystalline and Homoepitaxial Films
- Forward Characteristics of p-Type Diamond / n-Type Silicon Heterojunction Diodes
- Anomalous Photoinduced Change in Threshold Voltage of Current-Controlled Negative Resistance in Si p-i-n Diodes Doped with Gold
- "Backward Diode" Characteristics of p-Type Diamond/n-Type Silicon Heterojunction Diodes
- An Anomalous Change in Threshold Voltage of Photoilluminated Si p-i-n Diode Doped with Au
- A Simulation of Transient Negative Photoconduetivity in Silicon Doped with Gold
- Observation of Transient Negative Electroconductivity Characteristics in Silicon Doped with Gold
- Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements
- Diode- and Triode-structure amorphous selenium photodetectors driven by diamond cold cathode
- Temperature Dependence of Electrical Conduction Mechanism in Amorphous Semiconductor
- Measurement of Local Potential Distribution in Amorphous Semiconductor
- Electrical Characteristics of I_b/Undoped Diamond Junction Diode at High Temperature
- Effect of (-)-5-Vinyl-2-oxazolidinethione on the Thyroid Hormone Biosynthesis in Chicks
- Generalization of Ramo's Theorem and Its Application to Semiconducting Materials
- Cloning and gene expression of hexokinase I and II in the chicken skeletal muscle
- Electrolysis by Using Diamond Thin Film Electrodes