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Department of Electronic Engineering, Faculty of Engineering, Tohoku University | 論文
- A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
- Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
- Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
- Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
- Magnetic Domain Structure of Fe_3Al Alloy with Two-Phase Mixture Studied by Lorentz Microscopy
- Study of the Temperature Dependence of the Magnetization Direction in Cobalt Single Crystals by 1 MV Lorentz Electron Microscopy
- Analysis of Negative Resistance Based on Space-Charge-Layers Overlapping in Switching Diodes with Deep Impurity Levels
- Delayed Switching in Crystalline Si Diodes with Deep Impurity Levels
- Heavily Te-Doped GaAs Layers by Plasma-Assisted Epitaxy
- Low Temperature Thermal Nitridation of GaAs Surfaces
- Schottky Contact Characterization of Sputter-Etched Surface of GaAs and Its Recovery by Annealing
- Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O_2/N_2 Plasma
- Gallium Oxide Film by Anodic Oxidization of Gallium
- Gallium Oxide Thin Film by Reactive Vapour Deposition
- Bulk Limited Conduction in Metal-Insulator-Metal Systems
- Silicon Wafer Orientation Dependence of Metal Oxide Sermiconductor Device Reliability
- Direct Synthesis of fct-FePt Nanoparticles by Chemical Route
- Effect of antiferromagnetic grain size on exchange anisotropy in Ni-Fe/25 at% Ni-Mn films
- Preoxide-Controlled Oxidation for Very Thin Oxide Films
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide