スポンサーリンク
Department of Electrical and Electronic Engineering, the University of Tokushima | 論文
- Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
- Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile
- High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors(Heterostructure Microelectronics with TWHM2003)
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films
- 582.Blood flow in the carotid artery during breath-holding in relation to diving bradycardia
- 134.THREE CHANNELS TELEMETRY SYSTEM : ECG, BLOOD VELOCITIES OF THE CAROTID AND THE BRACHIAL ARTERIES
- Modulation of Voltage-Gated Ca^ Current by 4-Hydroxynonenal in Dentate Granule Cells(Highlighted paper setected by Editor-in-cfiief)(Pharmacology)
- Multi-Dipole Sources Identification from EEG Topography Using System Identification Method(Biological Engineering)
- High Voltage Generation from Inductive Pulsed Power Generator Using a Marx Circuit and an Exploding Wire
- Unstable Behavior in Exploding Wire Array
- Tiny nodule in the testicle : Case report of a sertoli cell tumor
- Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition
- Comparison and Investigation of Ohmic Characteristics in the Ni/AuZn and Cr/AuZn Metal Schemes