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Department of Electrical and Electronic Engineering, Musashi Institute of Technology | 論文
- SOCIO-PHYSICAL ENVIRONMENTS AND ALGAE/WATER QUALITY PROPERTIES OF IRRIGATION PONDS : CASE STUDY IN MINAKUCHI AND OTSU, JAPAN
- Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa_2Cu_3O_x Thin Films Using Ultrasonic Gas Concentration Analyzer
- In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa_2Cu_3O_x Thin Films by Spectroscopic Ellipsometry
- Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface
- Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
- Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0-7-nm-Thick SiO_2 Layer
- Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon Surface
- Resonance-Enhanced Multiphoton Ionization Study of NO Scattering from a Corrugated Si(100) Surface with Oxygen Coverage
- A Molecular Beam Study of the Trapping and Desorption of Oxygen from Si(100) Surfaces
- Preparation of a Thin Silicon Nitride Layer by Photo-CVD and Its Application to InP MISFET's
- Si-SiO_2 Interface Structures : Chemical Shifts in Si 2p Photoelectron Spectra : Surfaces, Interfaces and Films
- Retinoic Acids Repress the Expression of ETS-1 in Endothelial Cells
- Low-Temperature Thermal-Oxidation of Silicon
- A Case of Familial Pulmonary Mycobacterium avium Complex Disease
- Chemical Bonds at and Near the SiO_2/Si Interface
- Optical Absorption in Ultrathin Silicon Oxide Film (SOLID STATE DEVICES AND MATERIALS 1)
- Electron Tunneling through Chemical Oxide of Silicon
- Electron Tunneling through Chemical Oxide of Silicon
- Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films
- Effect of Preoxide on the Structure of Thernmal Oxide