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Department of Electrical and Electronic Engineering, Musashi Institute of Technology | 論文
- Central Alveolar Hypoventilation Syndrome Due to Surgical Resection for Bulbar Hemangioblastoma
- Initial Stage of Oxidation of Hydrogen-Termimated Si(100)-2×1 Surface
- Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- Soft X-Ray Absorption and Emission Study of Silicon Oxynitride/Si(100) Interface
- Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
- Superconducting Properties of Ultrathin Films of YBa_2Cu_3O_x Prepared by Metalorganic Chemical Vapor Deposition at 500℃
- Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N_2O
- Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex
- Epitaxial Growth of YBaCuO Films on Sapphire at 500℃ by Metalorganie Chemical Vapor Deposition
- OJ-031 Effectiveness of Reperfusion Therapy with a Distal Protection Device (PercuSurge) for Acute Myocardial Infarction(Acute Myocardial Infarction, Clinical (Diagnosis/Treatment) 1 (IHD) : OJ4)(Oral Presentation (Japanese))
- Thrombectomy with Rescue TM Catheter Prevents Left Ventricular Remodeling after Acute Anterior Wall Myocardial Infarction
- Predictors of Restenosis after Implantation of the Radius Stent
- Impact of Introduction of RescueTM Catheter to Treatment for Patients with Acute Myocardial Infarction
- Effectiveness of Thrombectomy with Rescue TM Catheter for Acute Myocardial Infarction
- Effectiveness of Thrombectomy With Rescue^ Catheter in Native coronary Arteries for Patients With Acute Myocardial Infarction
- Silicon-Hydrogen Bonds in Silicon Native Oxides Formed during Wet Chemical Treatments
- Interface Roughness Produced by Nitrogen Atom Incorporation at a SiO_2/Si(100) Interface : Semiconductors
- Atomic Layer Etching of Silicon by Thermal Desorption Method
- A Proposed Atomic-Layer-Deposition of Germanium on Si Surface