スポンサーリンク
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan | 論文
- Maternal-fetal transmission of Toxoplasma gondii in interferon-γ deficient pregnant mice
- Anaphylactic reaction induced by Toxoplasma gondii-derived heat shock protein 70
- Roles of Toxoplasma gondii-Derived Heat Shock Protein 70 in Host Defense against T. gondii Infection
- Toxoplasma gondii infection inhibits the development of lupus-like syndrome in autoimmune (New Zealand Black×New Zealand White) F1 mice
- A quantitative assay method of Toxoplasma gondii HSP70 mRNA by quantitative competitive-reverse transcriptase-PCR
- Induction of Protective Immunity by Primed B-1 Cells in Toxoplasma gondii-Infected B Cell-Deficient Mice
- Subsequent Vertebral Factures Following Thoracolumbar Fusion Surgery
- In vivo study of toxoplasmic parasitemia using interferon-γ-deficient mice : Absolute cell number of leukocytes, parasite load and cell susceptibility
- Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
- Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
- Toxoplasma gondii-derived heat shock protein 70 induces lethal anaphylactic reaction through activation of cytosolic phospholipase A_2 and platelet-activating factor via Toll-like receptor 4/myeloid differentiation factor 88
- Maternal-fetal transmission of Toxoplasma gondii in interferon-γ deficient pregnant mice
- Protective immunity against lethal anaphylactic reaction in Toxoplasma gondii-infected mice by DNA vaccination with T. gondii-derived heat shock protein 70 gene
- Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources
- Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film
- Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia
- Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
- Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy
- Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates