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Department of Electrical and Electronic Engineering, Meijo University | 論文
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Optical Emission Spectra during Carbon Nanotube Production by Arc Discharge in H_2, CH_4 or He Gas
- Microscopic Investigation of Al_Ga_N on Sapphire
- Stress and Defect Control in GaN Using Low Temperature Interlayers
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
- Theoretical Model and Device Performance of CuInS_2 Thin Film Solar Cell
- Effects of Oxygen and Nitrogen Atoms on SiOCH Film Etching in Ultrahigh-Frequency Plasma
- Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N_2 and H_2 Gas Chemistry
- Water Quality of Lake Toya and of all the Lake's In- and Outflow Rivers
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
- Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
- Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
- GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
- Optical Properties of Strained AlGaN and GaInN on GaN