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Department of Electrical Engineering and Information Systems, The University of Tokyo | 論文
- Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
- Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
- An Automatic Method of Mapping I/O Sequences of Chip Execution onto High-level Design for Post-Silicon Debugging
- A 580fs-Resolution Time-to-Digital Converter Utilizing Differential Pulse-Shrinking Buffer Ring in 0.18µm CMOS Technology
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Characterization of Ni--GaSb Alloys Formed by Direct Reaction of Ni with GaSb
- Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb
- Iodine-Catalyzed Thermal cis-trans Isomerization of Stilbene
- Photochemical cis-trans Isomerizatin of Stilbene
- Lithium Isotope Separation on Complex Formation(II). Kinetic Study of the Exchange Reaction of Lithium Chloride-1, 4-Dioxane Complex
- Lithium Isotope Separation on Complex Formation I. Equilibrium Study
- General Relativistic MHD Simulations of the Gravitational Collapse of a Rotating Star with Magnetic Field as a Model of Gamma-Ray Bursts(Poster)
- Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide
- C-12-40 Effect of CMOS Device Scaling on Time-domain Voltage-domain Dynamic Range