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Department of Electrical Engineering and Computer Science, The University of Michigan | 論文
- Design and Analysis of Resonant-Tunneling-Diode (RTD) Based High Performance Memory System (Special Issue on Integrated Electronics and New System Paradigms)
- First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs(Heterostructure Microelectronics with TWHM2003)
- Improvement of CO Sensitivity in GaN-Based Gas Sensors(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Yellow Luminescence Centers of GaN
- A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si(Heterostructure Microelectronics with TWHM2003)
- Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications
- AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
- New Scanning Photoluminescence Technique for Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials
- DC and High Frequency Characterization of Metalorganic Chemical Vapor Deposition (MOCVD) Grown InP/InGaAs PNP Heterojunction Bipolar Transistor
- Yellow Luminescence Centers of GaN