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Department of Electrical Engineering, Wu-Feng Institute of Technology | 論文
- High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films
- Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film
- Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium--Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate
- Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
- Enhanced Performance of GaN-Based Vertical Light-Emitting Diodes with Circular Protrusions Surmounted by Hexagonal Cones and Indium--Zinc Oxide Current Spreading Layer
- Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diode with Surface Roughening Using KrF Laser and ZnO Nanorods
- Light Output Improvement of GaN-Based Light-Emitting Diodes Using Hydrothermally Grown ZnO Nanotapers