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Department of Electrical Engineering, Faculty of Engineering, Hiroshima University | 論文
- Heteroepitaxial Growth of Yttria-Stabilized Zirconia (YSZ) on Silicon : Surfaces, Interfaces and Films
- Function of Substrate Bias Potential for Formation of Cubic Boron Nitride Films in Plasma CVD Technique
- Effects of Film Thickness and Substrate-Film Interface on the Formation of Metastable Crystalline GeTe_2 from Amorphous GeTe_2 Film
- Formation of Metal-Insulator-Semiconductor Structure(B/Hexagonal BN/Graphite) by Plasma Chemical Vapor Deposition
- Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
- Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing
- Localized-State-Density Distribution in Post-Hydrogenated CVD Amorphous Silicon
- Schottky Barrier Solar Cells of Weakly Hydrogenated CVD Amorphous Silicon : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Gap States and ESR of Boron-Doped CVD Amorphous Silicon
- Electronic Density of States in Chemically Vapor-Deposited Amorphous Silicon
- Localized States in Amorphous and Polycrystallized Si
- Surface States in Tunnelable MOS Structures
- Lattice Defects and Crystallization of Amorphous Germanium
- Physical Properties of Heavily B-doped Microcrystalline Si-Ge Alloys and Schottky Barrier of B-Si-Ge/P-Si
- Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on NH_4F-Treated Si(111) Surface
- In-Situ Observation of Silicide Formation on Hydrogen-Terminated Si Surface by UHV-STM and LEED
- Epitaxial Growth of ZnTe on GaAs(100) by RF Sputtering
- Theory of the Density of States Associated with Adatom in Chemisorption within the Anderson Model
- Quantum Size Effect of Semiconductor Microcrystallites Doped in SiO2-Glass Thin Films Prepared by Rf-Sputtering
- Moessbauer spectroscopic study of superconducting Y-Ba-Cu(Fe)-O ceramics and gamma-ray irradiation effect.