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Department of Electrical Engineering, Facully of Engineering Science, Osaka University | 論文
- Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO_2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Characterization of F_2 Treatment Effects on Si(100) Surface and Si(100)/SiO_3 Interface
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- (111) Preferred Oriented Pb(Zr, Ti)O_3 Thick Films Prepared by Multilayer Process and Its Application to Ultrasonic Sensors
- 速報 Highly Oriented Pb(Zr,Ti)O3 Films Prepared by Multi-step Process
- Preparation and Basic Properties of SrBi_2Ta_2O_9 Films
- Investigation of Fatigue Mechanisms in Pb(Zr, Ti)O_3 Films from a Correlated Analysis of Hysteresis Parameters in a Lattice Model with Distributed Polarization Clamping
- Bias Effect in Rf Sputtering of PbTiO_3 Thin Film : T: Thin Film
- PbTiO_3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si Wafer : Ultrasonic Transduction
- Hydrothermal Transformation of Gel Pb(Zr_, Ti_)O_3 Thin Films into Perovskite Phase at Low Temperature of 160℃
- Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Characterization of Surface Potential of Si-SiO_2 Interface by Photoreflectance Spectroscopy
- Contactless Measurement of Surface Temperature and Surface Potential of Si by Photoreflectance Spectroscopy
- Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy