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Department of Electric and Electronic Engineering, Toyohashi University of Technology | 論文
- Toothpaste artifact of the spinal cord observed in a victim of traffic accident who died of pulmonary thrombotic embolism after laminectomy
- Phylogenetic Study of the Family Formicidae based on the Sensillum Structures on the Antennae and Labial Palpi (Hymenoptera, Aculeata)
- A Wide Dynamic Range Photogate-Type Active Pixel Sensor Using a Self-Regulation Principle
- Smart Microfluidic Electrochemical DNA Sensors with Signal Processing Circuits
- Characteristics of Highly Sensitive pH Sensors with Charge Accumulation Operation
- Realization of In Situ Doped n-Type and p-Type Si-Microprobe Array by Selective Vapor-Liquid-Solid (VLS) Growth Method
- Evaluation of Electrodeposited Gold Nanostructures for Applications in QCM Sensing
- Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
- Fabrication of Crystalline HfO2 High-$\kappa$ Dielectric Films Deposited on Crystalline $\gamma$-Al2O3 Films
- Propagation of Shock Waves in Inhomogeneous Gases. VI : Oblique Hydromagnetic Shock Propagation
- Label-Free Acetylcholine Image Sensor Based on Charge Transfer Technology for Biological Phenomenon Tracking
- Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor
- Multichannel $5 \times 5$-Site 3-Dimensional Si Microprobe Electrode Array for Neural Activity Recording System
- Newton polygons and gevrey indices for linear partial differential operators
- Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline $\gamma$-Al2O3 High-$k$ Dielectric Deposited on Si Substrates
- Progressive-Type Fused pH and Optical Image Sensor
- Development of Cavity Structure for Field Emission on Si Substrate
- Multiplication Characteristics of a-Si:H p-i-n Photodiode Film in High Electric Field
- Current–Voltage Characteristics of $\gamma$-Al2O3/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses
- The Characteristic Improvement of Si (111) Metal–Oxide–Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing