スポンサーリンク
Department of Ceramic Engineering, Yonsei University | 論文
- Electrical properties of Al_2O_3/La_2O_3/Al_2O_3 films using various tunnel oxide thicknesses for non-volatile memory device applications
- Characterization of SiC:H films deposited using HMDS precursor with C_2H_2 dilution gas by remote PECVD system
- ZrO_2-CeO_2-YO_系の状態図計算
- Multiple myeloma in Korea : past, present, and future perspectives. Experience of the Korean Multiple Myeloma Working Party
- Immunohistochemical Localization of Aquaporin-4 in the Rat Pituitary Gland
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
- Simulation for thickness change of PRAM recording layer
- Formation of High-Temperature Stable Co-Silicide from Co_Ta_/Si Systems
- The Formation of High Temperature Stable Co-Silicide from Co_Ta_x/Si Systems
- Enhanced Fatigue Property through the Control of Interfacial Layer in Pt/PZT/Pt Structure
- Fabrication and Characterization of Pt-Oxide Electrode for Ferroelectric Random Access Memory Application
- Low Temperature Sintering of Ca[(Li_Nb_)_Ti_x]O_ Based Microwave Dielectric Ceramics with Glass Frit
- Recovery of Silicon Surface after Reactive Ion Etching of SiO_2 using CHF_3/C_2F_6 Plasma
- Effect of SrTiO3 buffer layer on the phase formation and properties of direct-patternable BiFeO3 thin films fabricated using photochemical metal-organic deposition
- Preparation and Characterization of Nanoparticulate CoFe_2O_4 Thin Films by the Sol-Gel Method(Special Issue on Selected Papers from the 4th Asian Symposium for Information Storage Technology)
- Preparation and Characterization of Nanopardculate CoFe2O4 Thin Films by Sol-Gel Method (第4回アジア情報記録技術シンポジウム)
- Preparation and Characterization of Nanoparticulate CoFe_2O_4 Thin Films By Sol-Gel Method
- Phase Transformation of Single Crystalline Silicon by Scratching
- Electric and ferroelectric properties of a multilayer film of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 for use as a ferroelectric field effect transistor
- Ferroelectric properties of direct-patternable La substituted Bi_4Ti_3O_ thin films formed by photochemical metal-organic deposition