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Department of Applied Physics | 論文
- Electronic Properties of Post-Hydrogenated Lightly-Boron-Doped CVD Amorphous Silicon
- Growth of Microcrystalline Si_xGe_ Alloy Films by Sputter-Assisted-Plasma CVD
- Radio-Frequency Downstream Plasma Production by Surface-Wave in a Very High-Permittivity Material Discharge Tube
- Etching Reactivity of Negative Ions Generated in Cl_2 Downstream Plasma
- Electron Energy Control in Inductively Coupled Plasma Employing Multimode Antenna
- Thin Film Detection Employing Frequency Shift in Sheath Current Oscillation
- Excitation of Sheath Oscillating Current by Superimposing Pulse Voltage
- Silicon Etching Employing Negative Ion in SF_6 Plasma
- Ferromagnetic Transition of ±J Ising Spin Glass Model on Square Lattice
- Warming Potential Reduction of C_4F_8 Using Inductively Coupled Plasma
- Dielectric Constant of PbTiO_3 Crystals in Sub-Kelvin Temperature Region
- Dielectrc Constant of Both Amorphous and Crystalline PbTiO_3 at Low Temperatures
- LaNi_5の表面改質による仕事関数の変化が水素吸蔵速度に及ぼす影響
- 衝撃圧縮法によるSm_2Fe_N_3焼結磁石の作製
- A Samarium-Iron Nitride Magnet Fabricated by Shock-Compaction Technique
- Laser-Induced Fluorescence Study of Penning Collision of Hel 2^1S Atom with Xe in He+Xe Gas Discharge Plasma : Waves, Optics and Quantum Electronics
- A Study of Capacitively Coupled Plasma Generation in Single-Loop Antennas : Nuclear Science, Plasmas, and Electric Discharges
- Dependence of Electronic Properties of Hydrogenated Amorphous Ge on Deposition Condition
- Defect Compensation by Bonded Hydrogen in Undoped a-Ge:H Films with Mono- and Dihydride Bonding
- Nitrogen Absorption by Sm_2Fe_(Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)