スポンサーリンク
Department Of Quantum Engineering School Of Engineering Nagoya University | 論文
- High Performance of Silicon Oxide Selective Etching Using F_2 Gas and Graphite Instead of Perfluorinated Compound Gases
- CH_3 Radical Density in Electron Cyclotron Resonance CH_3OH and CH_3OH/H_2 Plasmas
- CF_X (X=1-3) Radical Measurements in ECR Etching Plasma Employing C_4F_8 Gas by Infrared Diode Laser Absorption Spectroscopy
- CF_X(X=1-3) Radicals Controlled by On-Off Modulated Electron Cyclotron Resonance Plasma and Their Effects on Polymer Film Deposition ( Plasma Processing)
- Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
- Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy
- Effects of Dilution Gases on Si Atoms and SiHx^^+ (X = 0-3) Ions in Electron Cyclotron Resonance SiH_4 Plasmas
- Measurements of the CF, CF_2 and CF_3 Radicals in a CHF_3 Electron Cyclotron Resonance Plasma
- Excitation of Azimuthally Propagating Ion-Cyclotron Drift Waves in Large Magnetized Plasma : Nuclear Science, Plasmas and Electric Discharges
- Ion Cyclotron Drift Waves in Plasmas with Controlled Radial Density Distributions
- Synthesis of Fluorinated SiN_x Gate Dielectric Films Using ECR-PECVD Employing SiF_4/N_2/H_2 Gases
- Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by Plasma Enhanced Chemical Vapor Deposition Employing NH_3 and SiF_4