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Department Of Quantum Engineering Graduate School Of Engineering Nagoya University | 論文
- Neutron scattering study of the normal-incommensurate phase transition in Rb_2ZnBr_4
- Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n^+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors
- Organization of the psaH Gene Family of Photosystem I in Nicotiana sylvestris : GENES STRUCTURE AND EXPRESSION
- Observation of Vicinal Si(111)7×7 Surface by Energy-Filtered Reflection High-Energy Electron Diffraction
- Spatial Distribution Measurement of Absolute Densities of CF and CF_2 Radicals in a High Density Plasma Reactor Using a Combination of Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
- Results of a preliminary study using hypofractionated involved-field radiation therapy and concurrent carboplatin/paclitaxel in the treatment of locally advanced non-small-cell lung cancer
- Reinvestigation of Low-Temperature Phase Transitions in Rb_2ZnBr_4
- Phase Transitions and Structures of Phases I, III and IV of (NH_4)_2ZnBr_4
- Atomic Force Microscopy and Kelvin Probe Force Microscopy Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
- AFM and KFM Measurements of Semiconductor Surface Using Carbon Nanotube Tip Fabricated by Electrophoresis
- Isotope Effects on Thermal Conductivity of Boron Carbide
- AlGaN/GaN HEMTs with inclined-gate-recess structure
- Thermodynamic Activity and Gibbs Energy of Mixing of Rare Earth Alloys (高温質量分析特集号)
- Pb- and Ti-isotope Effects in PbTiO_3 by Heat Capacity Measurement and Neutron Powder Diffraction
- Development of Energy-Filtered Reflection High-Energy Electron Diffraction Apparatus
- Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors
- Synthesis of Fluorinated SiN_x Gate Dielectric Films Using ECR-PECVD Employing SiF_4/N_2/H_2 Gases
- Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by Plasma Enhanced Chemical Vapor Deposition Employing NH_3 and SiF_4
- Control of Ion Bombardment and Species for Ultra Low Temperature Formation of Silicon Nitride Gate Dielectric Films Using Plasma Chemical Vapor Deposition
- High Temperature Vapor Pressure of Si (高温質量分析特集号)