High Temperature Vapor Pressure of Si (高温質量分析特集号)

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The vapor pressures of Si(g) and Si2(g) over Si(l) were measured with a time-of-flight mass spectrometer equipped with a boron-nitride Knudsen cell. The equations for the vapor pressure of Si(g) and Si2(g) obtained by the least squares treatment were given as follows:log(PSi/Pa)=(-2.08±0.10)×104K/T+(10.84±0.53)log(PSi2/Pa)=(-2.46±0.09)×104K/T+(10.93±0.47)The vaporization enthalpy of Si(g) at the standard state (409.2±2.3 kJ mol-1) calculated based on the third law was in good agreement with the second law one (407.4±19.1 kJ mol-1). The third law value of the vaporization enthalpy of Si2(g) at the standard state (493.7±1.9 kJ mol-1) was also in good agreement with the second law one (491.5±15.7 kJ mol-1). The dissociation energies of Si2(g) calculated from the vaporization enthalpy of Si(g) and Si2(g) at the standard state were 323.3±31.2 kJ mol-1 (the second law value) and 324.7±3.8 kJ mol-1 (the third law value).
日本質量分析学会の論文
1999-02-01