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Department Of Photonics Ritsumeikan University | 論文
- Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
- Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
- Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering
- Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Sputtering Method
- Thin-Film Deposition of Cu_2O by Reactive Radio-Frequency Magnetron Sputtering
- Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
- Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
- Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
- Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
- Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
- SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
- Analysis of Fluorocarbon Deposition during SiO_2 Etching
- Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
- Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
- Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
- Silicorn Dioxide Thin Films Prepared from Silicon Tetraacetate Using ArF Excimer Laser by Chemical Vapor Deposition
- Electrical Characterization of Silicon Dioxide Thin Film Prepared by ArF Excimer Laser Chemical Vapor Deposition frorn Silicon Tetraacetate
- Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy
- RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
- Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors