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Department Of Materials Science Kitami Institute Of Technology | 論文
- Effect of the Flow Rate of H_2 in the Reduction Process on the Physical and Catalytic Properties of H_2-Reduced Pt/MoO_3
- Effect of H_2 Flow Rate in Reduction Process on the Catalytic Properties of Reduced MoO_3
- Dehydration of 2-Propanol over Molybdenum Oxide Treated with Hydrogen
- Catalytic Properties of Ni-MoO_3 for the Isomerization of Heptane
- Transport Properties of Cu/Permalloy Artificial Layers : Condensed Matter: Electronic Properties, etc.
- ^Cs NMR Spin-Lattice Relaxation Studies in Incommensurate Cs_2MBr_4(M=Cd,Hg)
- Hyperbranched 5,6-glucan as reducing sugar ball
- CPM2000-72 WOx薄膜の形成過程とその電気及び光学特性
- Preparation of Hydrogen-Containing Ta_2O_5 Thin Films by Reactive Sputtering Using O_2 + H_2O Mixed Gas
- Effect of Substrate Temperature on Epitaxial Orientation of Rh Thin Films Sputtered on A-Plane Sapphire
- Control of Epitaxial Growth Plane of Rh Thin Films on A-Plane Sapphire by Sputter Deposition
- Oxidation and Morphology Change of Ru Films Caused by Sputter Deposition of Ta_2O_5 Films
- Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si
- Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
- Epitaxial Growth of (001)Rh Thin Film on (001)MgO Single-Crystal Substrate by Sputtering
- Difference in Thermal Degradation Behavior of ZrO_2 and HfO_2 Anodized Capacitors
- Crystal Orientation Change of Ni Films by Sputtering in Ar-N_2 Mixed Gases
- Improvement of the Crystal Orientation and Surface Roughness of Ru Thin Films by Introducing Oxygen during Sputtering
- Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001) Si
- Epitaxial Ir Thin Film on (001) MgO Single Crystal Prepared by Sputtering