スポンサーリンク
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology (k-jist) | 論文
- The Migration Path of Co Ions in Co-Substituted Spinel Ferrite Thin Films during Magnetic Annealing
- Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO : Al Epitaxial Layer
- Thermally Stable and Low Resistance Ru Ohmic Contacts to n-ZnO : Semiconductors
- Low Resistance and Thermally Stable Pt/W/Au Ohmic Contacts to P-Type GaN
- High Quality Nonalloyed Pt Ohmic Contacts to P-Type GaN Using Various Surface Treatment
- Formation of (411)A Faceted GaAs Ridges Using Chemical Beam Epitaxy
- Low-Temperature Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine, Triethylgallium and Trimethylindium
- Surface Morphology of (NH_4)_2S_x-Treated GaAs (100) Investigated by Scanrning Tunneling Microscopy
- Investigation into the Role of Low-Temperature GaN in n-GaN/InGaN/p-GaN Double-Heterostructure Light-Emitting Diodes
- Reduction of Threading Dislocations in InGaN/GaN Double Heterostructure through the Introduction of Low-Temperature GaN Intermediate Layer
- Atomic Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching
- Effect of Rapid Thermal Annealing on Al Doped n-ZnO Films Grown by RF-Magnetron Sputtering
- Formation of Natural InAlAs Vertical Superlattices
- High-Rate Dry Etching of ZnO in BCl_3/CH_4/H_2 Plasmas
- Dual-Color Emission in Hybrid III-Nitride/ZnO Light Emitting Diodes
- Characterisation of GaNP Layers Grown on (0001) GaN/Sapphire by Gas Source Molecular Beam Epitaxy
- Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga_In_As/Ga_xIn_As_yP_/Ga_In_P/GaAs Quantum Well Structure
- Electrical and Structural Properties of Ti/Au Ohmic Contacts on N-ZnO:Al
- Ordering and Associated Domain Structures in Zinc and Silicon Doped Ga_In_P and Ga_xInAs_yP_ Layers Grown on GaAs by Metalorganic Vapour Phase Epitaxy
- Interface Formation and Phase Distribution Induced by Co/SiC Solid State Reactions